Chemical and Mechanical Structures of SiN Films as Gas Barrier Layer

Chemical and Mechanical Structures of SiN Films as Gas Barrier Layer

Seong-Keun Cho
KRICT

Hydrogenated amorphous silicon nitride films (a-SiNx:H) have been used frequently as gas barrier use. In this paper, a-SiNx:H films grown by roll to roll PECVD with various process conditions at low temperature were investigated from the point of view of correlation between microstructure and gas barrier properties. The chemical compositions and bond densities were confirmed using FTIR and other analytical techniques and were compared by WVTR. Under optimum conditions, the WVTR of SiN silngle-layer on PET with organic planarization layer was reached down to 0.003g/m2.day and showed exellent mechanical flexibility with the failure bending radius of below 2mm.